Impedance controlled packages with metal sheet or 2-layer rdl

ABSTRACT

A microelectronic assembly is disclosed that is capable of achieving a desired impedance for raised conductive elements. The microelectronic assembly may include an interconnection element, a surface conductive element, a microelectronic device, a plurality of raised conductive elements, and a bond element. The microelectronic device may overlie the dielectric element and at least one surface conductive element attached to the front surface. The plurality of raised conductive elements may connect the device contacts with the element contacts. The raised conductive elements may have substantial portions spaced a first height above and extending at least generally parallel to at least one surface conductive element, such that a desired impedance may be achieved for the raised conductive elements. A bond element may electrically connect at least one surface conductive element with at least one reference contact that may be connectable to a source of reference potential.

BACKGROUND OF THE INVENTION

Microelectronic chips are typically flat bodies with oppositely facing,generally planar front and rear surfaces with edges extending betweenthese surfaces. Chips generally have contacts, sometimes also referredto as pads or bond pads, on the front surface which are electricallyconnected to the circuits within the chip. Chips are typically packagedby enclosing them with a suitable material to form microelectronicpackages having terminals that are electrically connected to the chipcontacts. The package may then be connected to test equipment todetermine whether the packaged device conforms to a desired performancestandard. Once tested, the package may be connected to a larger circuit(e.g., a circuit in an electronic product such as a computer or a cellphone) by connecting the package terminals to matching lands on aprinted circuit board (PCB) by a suitable connection method such assoldering.

Microelectronic packages may be fabricated at the wafer level; that is,the enclosure, terminations and other features that constitute thepackage, are fabricated while the chips, or die, are still in a waferform. After the die have been formed, the wafer is subject to a numberof additional process steps to form the package structure on the wafer,and the wafer is then diced to free the individually packaged die. Waferlevel processing can be an efficient fabrication method because thefootprint of each die package may be made identical, or nearlyidentical, to the size of the die itself, resulting in very efficientutilization of area on the printed circuit board to which the packageddie is attached.

A common technique for forming electrically conductive connectionsbetween a microelectronic chip and one or more other electroniccomponents is through wirebonding. Conventionally, a wirebonding toolattaches the end of a wire to a pad on a microelectronic chip usingthermal and/or ultrasonic energy and then loops the wire to a contact onthe other electronic component and forms a second bond thereto usingthermal and/or ultrasonic forces.

SUMMARY OF THE INVENTION

As discussed in U.S. application Ser. No. 12/722,784, filed on Mar. 12,2010 and U.S. application Ser. No. 12/722,799, filed on Mar. 12, 2010,the disclosures of which are incorporated herein by reference, as wellas U.S. Application entitled Metal Can Impedance Control Structure,filed by the same assignee herein, on Sep. 16, 2010, the disclosure ofwhich is also incorporated by reference, one of the problems withwire-bond technology inventors have recognized that one of the problemswith wirebond technology is that electromagnetic transmissions along awire can extend into space surrounding the wire, inducing currents innearby conductors and causing unwanted radiation and detuning of theline. Wirebonds generally are also subject to self-inductances and aresubject to external noise (e.g. from nearby electronic components). Inthe end, this creates electrical impedance problems. These problems canbecome more serious as the pitch between contacts on microelectronicchips and other electronic components becomes smaller, as the chipsoperate at higher frequencies, and as the use of multiple raw padsbecomes more common.

Various structures and techniques for manufacturing are described hereinfor a microelectronic assembly. In one embodiment, a microelectronicassembly includes an interconnection element, a microelectronic device,a plurality of raised conductive elements, a surface conductive element,and a bond element. The interconnection element may be a dielectricelement that has a plurality of element contacts and at least onereference contact on the surface of the interconnection element. Themicroelectronic device overlies the dielectric element and has a rearsurface overlying the dielectric element, an opposed front surface withdevice contacts exposed thereat, and at least one surface conductiveelement attached to the front surface. A plurality of raised conductiveelements may connect the device contacts with the element contacts. Theraised conductive elements may have substantial portions spaced a firstheight above and extending at least generally parallel to at least onesurface conductive element, such that a desired impedance may beachieved for the raised conductive elements. A bond element mayelectrically connect at least one surface conductive element with atleast one reference contact that may be connectable to a source ofreference potential.

In one embodiment, substantial portions of each of the conductiveelements may be a length that is at least 25% of the total length ofeach conductive element. Alternatively, the substantial portion of eachconductive element may be at least 1 millimeter. Additionally, the firstand second edges may meet at a corner of the microelectronic device.

In another embodiment, the bond element may be a first bond elementextending beyond a first edge of the microelectronic device. There mayalso be a second bond element extending beyond a second edge of themicroelectronic device and connecting the at least one surfaceconductive element to a second reference contact of the interconnectionelement. Alternatively, the bond element may be positioned between atleast two of the plurality of raised conductive elements. In yet anotheralternative, the bond element may extend in a direction transverse tothe direction in which at least some of the plurality of raisedconductive elements extend.

In another embodiment, at least one of the plurality of raisedconductive elements extends beyond a first edge of the microelectronicdevice and the bond element extends beyond the first edge. The raisedconductive elements may include bond wires. Alternatively, all of theconductive elements are bond wires.

In one embodiment, the surface conductive element may be a power plane,a ground plane, or a combination of a power and ground plane. Thesurface conductive element may also be connectable to a fixed voltagesource. Alternatively, the surface conductive element may further reducean inductance in the electrical connection between the device contactand a source of fixed voltage.

In another embodiment, the surface conductive element may be comprisedof multiple sections, wherein at least a first section may be a powerplane and a second section may be a ground plane. The first section maybe adjacent one edge of the device contacts and the second section maybe adjacent the opposed edge of the device contacts. Alternatively, thefirst and second sections may be adjacent the same edge of the devicecontacts.

In one embodiment, the first section may be further comprised of a firstportion and a second portion, wherein device contacts extendtherebetween. In one embodiment, there may be another bond element thatelectrically connects the first and second portions of the firstsection. Additionally, the second section may also be further comprisedof a first portion and a second portion, and the device contacts mayalso further extend therebetween. Another bond element may be used toelectrically connect the first and second portions of the secondsection.

In still another embodiment, another bond element may be used toelectrically connect device contacts with the first portion or secondportion of at least one of the first section and second sections.Alternatively, another bond element may connect at least one devicecontact with at least one surface conductive element.

Turning now to another aspect of the presently disclosed embodiments, amicroelectronic assembly includes an interconnection element having aface, a microelectronic device, a metal plane, and first and second bondelements. The microelectronic device may overly the face of theinterconnection element and may have a plurality of first devicecontacts disposed the surface of the microelectronic device. An at leastone second device contact may also be disposed at the surface and atleast one trace may be deposited on the surface and electricallyconnected to the interconnection element. The at least one trace mayelectrically connect at least one of the first device contacts with theat least one second device contact. At least one first bond elementelectrically connects the at least one second device contact with atleast one of the element contacts. At least one metal plane may beelectrically connected to the interconnection element and attached tothe microelectronic device at a height from the surface greater than aheight of the at least one trace from the surface. The at least onemetal plane may be connectable to a source of reference potential, suchthat a desired impedance may be achieved for the at least one trace. Theat least one trace may have at least a substantial portion extending ina direction substantially parallel to a direction in which the metalplane extends. At least one bond element electrically connects the metalplane with a reference element of the interconnection element, which maybe electrically connectable with a source of reference potential.

In one embodiment, the substantial portion of the at least one trace maybe a length that is at least 25% of the total length of the at least onetrace or have a length of at least 1 millimeter.

In one embodiment, the second bond element extends beyond a first edgeof the microelectronic device, and the second bond element extendsbeyond a second edge of the microelectronic device. The first and secondedges of the microelectronic device meet at a corner of themicroelectronic device.

In one embodiment, the first bond element may be a plurality of firstbond elements and the at least one second bond may be positioned betweenat least two of the plurality of first bond elements. Alternatively, theat least one second bond element extends in a direction transverse tothe direction in which the at least one first bond element extends.

In one embodiment, the metal plane reduces an inductance in theelectrical connection between the device contact and a source of fixedvoltage. Alternatively, the metal plane may be a power plane, a groundplane, or a combination of a ground plane and a power plane.Additionally, the metal plane may be connectable to a fixed voltagesource.

In another embodiment, the at least one first bond element or the atleast one second bond element includes a bond wire. Alternatively, theat least one first bond element or the at least one second bond elementmay be a bond wire.

In one embodiment, the metal plane may be comprised of multiplesections, wherein at least one first section may be a power plane and asecond section may be a ground plane. The first section may be adjacentone edge of the device contacts and the second section may be adjacentthe opposed edge of the device contacts. Alternatively, the first andsecond sections may be adjacent the same edge of the device contacts.Device contacts may extend between each of the first portions, each ofthe second portions, or both the first and second sections.

A third bond element may additionally electrically connect the first andsecond portions of the first section. Alternatively, the third bondelement may electrically connect the first and second portions of thesecond section Additionally, the third bond element may electricallyconnect device contacts with the first portion or second portion ofeither or both the first section and second section. Furthermore, thethird bond element may electrically connect device contacts with thefirst portion or second portion of at least one of the first section andsecond sections.

In another embodiment, at least one third bond element electricallyconnects at least one device contact with at least one surfaceconductive element. In still another embodiment, the at least one thirdbond element electrically connects the metal plane with a referencecontact of the interconnection element.

In one embodiment, the microelectronic assembly includes a firstmicroelectronic device, a second microelectronic device, and thereference conductor may be a first reference conductor. The first andsecond microelectronic device have a plurality of third device contactsdisposed at a surface remote from the first microelectronic device. Atleast one fourth device contact may be disposed at the surface, and atleast one trace may extend along the surface and electrically connect atleast one of the third device contacts with the at least one fourthdevice contact. The at least one second reference conductor may overliethe surface of the second microelectronic device at a height from thesurface greater than a height of the at least one trace from the surfaceof the second microelectronic device. The at least one second referenceconductor may be connectable to a source of reference potential, suchthat a desired impedance may be achieved for the at least one trace ofthe second microelectronic device. The second reference conductor has atleast a substantial portion extending in a direction substantiallyparallel to a direction in which the at least one trace of the secondmicroelectronic device extends.

Further aspects of the invention provide systems which incorporatemicroelectronic structures according to the foregoing aspects of theinvention, composite chips according to the foregoing aspects of theinvention, or both in conjunction with other electronic devices. Forexample, the system may be disposed in a single housing, which may be aportable housing. Systems according to preferred embodiments in thisaspect of the invention may be more compact than comparable conventionalsystems.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of a microelectronic assembly.

FIG. 1A is a plan view of the microelectronic assembly shown in FIG. 1.

FIG. 1B is a top plan view of an alternative embodiment of themicroelectronic assembly shown in FIG. 1.

FIG. 1C is a diagram graphing characteristic impedance Z₀ relative toseparation height H for different diameters of bond wire, in accordancewith an embodiment.

FIG. 2 is a plan view of an alternate embodiment of the microelectronicassembly shown in FIGS. 1 and 1B.

FIG. 3 is a plan view of another alternate embodiment of themicroelectronic assembly shown in FIGS. 1 and 1B.

FIG. 4 is a sectional view of a microelectronic assembly in accordancewith another embodiment of the presently disclosed invention.

FIG. 4A is a plan view of the microelectronic assembly shown in FIG. 4.

FIG. 4B is a plan view of an alternate embodiment of the microelectronicassembly shown in FIG. 4

FIG. 5 is a sectional view of an alternate embodiment of themicroelectronic assembly shown in FIG. 4.

FIG. 6 is a schematic depiction of a system according to one embodimentof the invention.

DETAILED DESCRIPTION

FIG. 1 is a sectional view illustrating a microelectronic assembly 100including microelectronic device 10 and a conductive plane 60electrically connected with the interconnection element 30. FIG. 1A is aplan view from above the surface 28 and looking towards the surfacetowards contacts 12. As seen in FIGS. 1A-B, the conductive plane 60 caninclude openings 64 which expose individual ones of the contacts 12.Alternatively, as shown in the microelectronic assembly 100′ of FIG. 1B,the conductive plane 60 can include one or more larger openings 64′which expose some or all of the contacts of the microelectronic device.

In one embodiment, microelectronic assembly 100 includes amicroelectronic device 10 that is bonded the interconnection element byuse of a bonding material, such as a dielectric adhesive 53. Themicroelectronic device may be further conductively connected tointerconnection element 30 through a first plurality of device wires 65and also conductively connected to a conductive plane 60 through asecond plurality of reference wires 68. Microelectronic device 10 can bea single “bare”, i.e., unpackaged die, e.g., a semiconductor chip havingmicroelectronic circuitry thereon. In alternative embodiments,microelectronic device 10 can include a packaged semiconductor die.Initially, a plurality of contacts 12 are exposed at a surface 28 of themicroelectronic device 10. For example, a plurality of contacts 12 canbe exposed at a contact-bearing surface of a semiconductor die and maybe arranged in one or more rows exposed at such surface.

For ease of reference, directions are stated in this disclosure withreference to a “top”, i.e., contact-bearing surface 28 of asemiconductor chip or microelectronic device 10. Generally, directionsreferred to as “upward” or “rising from” shall refer to the directionorthogonal and away from the microelectronic device top surface 28.Directions referred to as “downward” shall refer to the directionsorthogonal to the device top surface 128 and opposite the upwarddirection. A “vertical” direction shall refer to a direction orthogonalto the chip top surface. The term “above” a reference point shall referto a point upward of the reference point, and the term “below” areference point shall refer to a point downward of the reference point.The “top” of any individual element shall refer to the point or pointsof that element which extend furthest in the upward direction, and theterm “bottom” of any element shall refer to the point or points of thatelement which extend furthest in the downward direction. It is to befurther appreciated that like reference numerals will be used todescribe like elements.

The wires 65, 68 typically are not insulated. As seen in FIG. 1,typically such wires 65, 68 are bonded to microelectronic device 10,conductive plane 60, and to interconnection element 30 usingconventional wirebonding techniques. In one embodiment, wires 65, 68 maybe typical of the types of wires used in a conventional wirebondingprocess. For example, wires 65, 68 may consist essentially of copper,gold, a gold-silver alloy, or some other metal or alloy of a metal withone or more other metals or materials or an alloy of a metal with one ormore other metals and one or more other materials.

Wirebonds, which are also be referred to herein as “bond wires”, can beformed with relatively precise placement and within desirable tolerancessuch that parallel, closely spaced runs can be achieved which runparallel to the surface 28 of the conductive plane 60. As used herein,“parallel” denotes a structure which is parallel to another structurewithin manufacturing tolerances. For example, wirebonding equipmentavailable from Kulicke and Soffa (hereinafter, “K&S”) can be used toachieve precision wirebonds. Thus, device wires 65 can be formed whichhave runs which are perfectly straight in lateral directions above thechip surface 28 and conductive plane 60 or are close to being straight.While such precision can be achieved in forming the wirebonds, nothingis meant to require precisely formed parallel, straight wirebonds otherthan as specifically recited in the appended claims.

In one embodiment, the conductive plane 60 overlies the microelectronicdevice 10 and may be positioned between the microelectronic device 10and wires 65. The conductive plane 60 can be formed and attached to themicroelectronic device 10 by any means known in the art. In oneembodiment, the conductive plane may be laminated onto the surface ofthe microelectronic device 10. For example, the conductive plane 60 canbe provided by pre-processing a metal sheet such as a copper foil, forexample, to form openings 64 in the metal sheet. Then, the metal sheetcan be bonded to the surface 28 of the microelectronic device, such asby using an adhesive 62. Alternatively, it may also be formed andattached to the surface of the microelectronic device by processingapplied to the surface 28 of a microelectronic device 10 such as a metaldeposition or plating process applied to the device while the device isin form of a wafer or panel containing a plurality of connected devicesor after the device has been singulated from other such devices.

In one embodiment, dimensions of the conductive plane 60 in directionsoriented horizontally with respect to the surface 28 of microelectronicdevice 10 can be smaller than corresponding dimensions of themicroelectronic device surface 28. As seen in FIGS. 1-1A, the surface 28of the microelectronic device has a first dimension 26 extending in afirst direction and has a second dimension 34 extending in a seconddirection that is transverse to the first direction. The first andsecond directions extend horizontally with respect to themicroelectronic device surface 28, that is, in directions along suchsurface. In such embodiment, the conductive layer 60 can have adimension 26 in the first direction which is smaller than thecorresponding first dimension 24 of the microelectronic device surface28. Similarly, the conductive layer 60 can have a dimension 36 in thesecond direction which is smaller than the corresponding seconddimension 34 of the microelectronic device surface 28.

A first set of wire bonds 65, referred to hereinafter as “device wires,”connect the contacts 12 of the microelectronic device 10 with contacts75 on the interconnection element 30. As seen in FIG. 1, the devicewires 65 have portions which are raised above the surface 28 of theconductive plane 60. These portions of the device wire 65 can extend ina horizontal direction parallel to or at least generally parallel to thesurface of the conductive plane 60, as shown in FIG. 1. The portions maybe parallel within manufacturing tolerances therefor.

In one embodiment, substantial portions x (FIG. 1) of each of therespective wire bonds, for example, 25% or more of the lengths of therespective wire bonds, or each of the lengths of the substantialportions of the respective wire bonds being at least 1 millimeter, aredisposed at a substantially uniform distance or height y (FIG. 1) fromthe conductive plane 60. In one embodiment, the height of the wirebondsfrom the conductive plane is set to between about 50 micrometers fromthe surface 28 of the microelectronic element and about 100 micrometersfrom the surface 28. The height from the conductive plane at which thedevice wires extend can be selected to achieve desired impedance forcarrying signals on the device wires. As discussed below relative toFIG. 1C, the height can be selected is based on a combination of factorssuch as the thickness of each wire, and the permeability of thedielectric material between the wire and the conductive plane.

When the device wires are disposed in such relationship with a referenceconductor such as conductive plane 60, signals to and from themicroelectronic device may be transmitted with less noise entering theconnections (e.g., wirebonds) carrying the signals. Each wirebond andthe conductive plane, being tied to a source of reference voltage, formsa transmission line structure that has a desired characteristicimpedance.

In order to achieve a desired characteristic impedance, parameters canbe selected such as the conductive properties of the metal used in thewire, as well as the shape and thickness of the wire, the thickness ofthe insulating material 50 between the wire and the conductive layer 60,the dielectric constant of the insulating material, i.e., permeability.

FIG. 1C graphs characteristic impedance Z₀, in ohms, versus separationdistance, in inches, between a signal conductor or conductive element,e.g., a wire of cylindrical cross-section or a trace, and a referenceconductor or conductive element, e.g., “ground plane.” The referenceconductor is assumed to be a planar structure that is large incomparison with the diameter of the signal conductor. FIG. 1B plotscharacteristic impedance for two different diameter wires. The plots inFIG. 1B can be derived from an equation that governs characteristicimpedance in an arrangement having the present geometry. In suchequation, the characteristic impedance Z₀ is given by

${Z_{0} = {\frac{138 \times {\log \left( {4{H/d}} \right)}}{\sqrt{ɛ_{R}}}\mspace{14mu} {ohms}}},$

where H is the separation distance between the wire and the conductiveplane, d is the diameter of the wire and ε_(R) is the permeability ofthe dielectric material that separates the wire from the conductiveplane. The permeability ε_(R) can vary depending on the type ofdielectric material used. The separation distance H is a factor whichcan be at least partly determined by the process used to fabricate themicroelectronic assembly. The wire diameter may be at least partlydetermined by the process used to fabricate the microelectronicassembly.

In FIG. 1C, the lower curve 320 plots the characteristic impedance whenthe wire used to form a wirebond has a thickness of 1 mil, i.e., 0.001inch. The upper curve plots 322 the characteristic impedance when thewire used to form the wirebond has a thickness of 0.7 mil, i.e., 0.0007inch. As seen in FIG. 1C, characteristic impedances lower than about 70ohms are provided when a separation distance H between the wire and theconductive plane is less than or equal to about 0.002 inch (2 mils),i.e., about 50 microns.

As shown in FIGS. 1 and 1A, in preferred embodiments, at least onereference wirebond 68 directly connects the conductive plane 60 to areference contact 77 on the interconnection element. In one embodiment,the reference wires 68 are connected to the conductive plane 60 at apoint adjacent the outer edge 57 of the conductive plane 60. At leastone of the reference wires 68 connects the surface conductor 60 with asource of reference potential (not shown).

As shown in FIG. 1A, at least one reference wire 68A may extend directlyfrom the top surface 14 of the conductive plane 60 and extend in adirection transverse to the direction of the device wires 65 connectingthe device contacts 12 with the contacts 75 on the interconnectionelement 30. Alternatively, one or more reference wires 68B,68C mayextend in a direction parallel to the device wires 65 that connect thedevice contacts 12 with contacts 75 on the interconnection element 30.In yet another alternate arrangement, at least one reference wire 68Cmay be positioned between two of the device wires 65. Similarly, thereference wire 68B may only be adjacent one device wire 65, such asadjacent one corner of the conductive plane 60 and a corner ofmicroelectronic device 10, where two adjacent edges of the conductiveplane 60 meet, and two edges of the microelectronic device 10 meet. Itis to be appreciated that any of the foregoing arrangements alone or incombination with one another, as well as any other arrangement of areference wire 68 extending from the conductive plane 60, may be used toprovide an electrical connection between the conductive plane 60 and areference contact 77, a source of reference potential (not shown), orsome other conductive contact or region that is internal or external tothe microelectronic assembly 100.

As seen in FIG. 1, in one embodiment, once the wires 65, 68 have beenwirebonded to microelectronic device 10 and interconnection element 30,and/or conductive plane 60, a dielectric material 50 can be formed tocover and protect the wires 65, 68. The dielectric 50 in this case mightbe one of a number of different materials such as a polymer, e.g., anepoxy, or another dielectric material, etc. In one embodiment,dielectric material 50 fills the entire void between the wires 65,68 andthe surfaces of the interconnection element 30 and microelectronicdevice 10.

As best seen in FIG. 1, terminals 40 of the microelectronic assembly 100may be used to connect the microelectronic assembly 100 to a circuitboard or external device (not shown), such as through solder balls 42,which can be attached to the terminals 40 and extend away from a surface52 of the interconnection element 30 remote from a surface 33 abovewhich microelectronic device 10 is mounted. Terminals can be providedwhich have other forms than that depicted in FIG. 1, and can be orinclude, for example, substantially rigid conductive posts such asformed by etching or plating a metal layer, e.g., copper, or acombination of etching and plating steps. Alternatively, the terminalscan be in form of any other known terminal structures which are capableof being used in microelectronic packages or assemblies for electricallyconnecting such packages or assemblies to a circuit panel, test board orthe like.

Referring now to the alternative embodiment of FIG. 2, such variationdemonstrates that it is not necessary for the conductive plane 60 to bea continuous and intact metal sheet. Instead, as seen in FIG. 2, theconductive layer 60 can be provided in the form of multiple planesoverlying the microelectronic device 10. In one embodiment, theconductive plane 60 may be divided into four conductive plane portions102,104,106,108. As shown, device contacts 12 may extend between theconductive plane portions 102,104 and conductive plane portions 106,108.The four conductive plane portions 102,104,106,108 are physicallyseparated from one another, such that standing alone (i.e., without anybonds connecting the conductive planes to a source of power), each ofthe conductive plane portions 102, 104, 106,108 is electricallyinsulated from one another.

As in the previous embodiments, device wires 65 may extend between thedevice contact 12 and element contacts 77 on the interconnection element12. Additionally, reference wires 68 may extend as wirebonds from any ofthe conductive plane portions 102, 104, 106, 108 to another device orcontact internal or external to the microelectronic assembly 200. In theembodiment shown, reference wires 68E may extend between two conductiveplane portions to help ensure that both conductive plane portions remainat a stable voltage despite temporary fluctuations in power demand orother transient effects. For example, reference wire 68E electricallyconnects conductive plane portion 102 and conductive plane portion 104,and reference wire 68E electrically connects conductive plane portions106, 108. Reference wires 68F may also electrically connect conductiveplane portions 102,104,106,108 to respective reference contacts 77 onthe interconnection element 30. One or more reference wires 68G may alsoextend between any of the conductive plane portions to a device contact12. For example, as shown, a reference wire electrically connects aconductive plane portion 104 with a reference contact 77, In oneembodiment, multiple reference wires 68G may extend between a conductiveplane portion (e.g., conductive plane portion 104, as shown) and asingle device contact 12.

In the exemplary embodiment shown, conductive plane portions 102,104 areground planes and conductive plane portions 106,108 are power planes.The conductive plane portions 102, 104 which are ground planes may beelectrically connected to device contacts 12 serving as a groundreference therefor, and a ground reference contact 77 of the substrate,and to one another. Further connection of the ground planes 102, 104 toa reference potential such as a system ground reference can be providedthrough terminals 40 of the microelectronic assembly 100 (FIG. 1). Theconductive plane portions 102, 104 which are power planes, may beelectrically connected to particular device contacts 12 of themicroelectronic device to which a voltage input other than ground isrequired, such as for connecting a power supply input. The power planescan also be electrically connected with one or more correspondingreference contacts 77 on the interconnection element and to one another.Further connection of the power planes 106, 108 to a reference potentialsuch as a power supply can be provided through terminals 40 of themicroelectronic assembly 100 (FIG. 1). Alternatively, instead ofproviding ground planes and power planes, all four conductive planeportions 102, 104, 106, and 108 may serve as ground plane portions andbe connected to ground device contacts 12 and ground reference contacts77.

Referring to FIG. 3, there is shown a top view of an alternativeembodiment of a microelectronic assembly. Instead of larger multipleplanes or sections, the conductive plane 60 may be in the form of aplurality of conductive strips 80 which extend along the surface of themicroelectronic device 10 in directions parallel to runs of the devicewire 65 between the device contacts 12 and the contacts 75 of theinterconnection element 30. The conductive strips 80 can be mechanicallysupported or held together with supporting portions 82. In oneembodiment, the conductive strips and supporting portions are formed asa metallic structure by subtractively patterning a copper foil or sheetand bonding the remaining metallic structure to the surface 128 of themicroelectronic device, such as with an adhesive material 62.

In the embodiment shown, the conductive strips 80 are divided into twoprimary portions, a first upper portion 300 and a second lower portion302. As shown, there are no supporting portions 82 extending between thefirst upper portion 300 and second lower portion 302, such that there isa natural division between the first upper portion 300 and second lowerportion 302. As in the previous embodiments, reference wires 68E mayextend between two conductive strips 80 in the first upper portion 300.Additionally, a reference wire 68F may extend from the conductive plane80 in the first upper portion 300 to a reference contact 77 on theinterconnection element 30. Similarly, reference wires 68E may extendbetween two conductive strips 80 in the second lower portion 302, aswell as extend from the conductive strip 80 in the second lower portion302 to a reference contact 77 on the interconnection element 30.Additionally, a reference wire 68G may extend from one of the conductivestrips 82 to a contact 12 on the microelectronic device 10.

The foregoing embodiments have been described with respect to theinterconnection of individual microelectronic devices, e.g.,semiconductor chips. However, it is contemplated that the methodsdescribed herein may be employed in a wafer-scale manufacturing processapplied simultaneously to a plurality of chips connected together atedges of the chips, such as a plurality of chips connected together atedges in form of a unit, panel, wafer or portion of a wafer.

Turning now to FIG. 4, a sectional view is shown illustrating amicroelectronic assembly 400 including microelectronic device 10 andconductive plane 60 electrically connected to an interconnection element30. FIG. 4A is a plan view from above the top surface 414 of theconductive plane 60 and looking toward the surface of the conductiveplane 60. As seen in FIG. 4A, the conductive plane 60 is a continuoussheet of conductive material that overlies the top surface 28 of themicroelectronic device 10. The conductive plane 60 may be comprised ofmaterials as previously disclosed herein.

As shown, the microelectronic device 10 may be bonded to theinterconnection element 30 using known bonding materials, such as adielectric adhesive 53. The conductive plane 60 may be directly attachedor bonded to the microelectronic element 10 through a lamination processor other known processes, as previously described. The conductive plane60 is positioned to overlie the microelectronic device 10, as well asredistribution traces 404 extending along the surface of themicroelectronic device 10.

The redistribution traces 404 may be formed on the microelectronicdevice 10 by any suitable metal deposition technique. The redistributiontraces 404 may be formed by depositing a primary metal layer, e.g., bysputtering, electroless deposition, etc. The primary metal layer canthen be photolithographically patterned into separate traces 404,followed by electroplating to increase the thickness of the traces andif desired, form redistribution traces 404 having multiple differentmetal layers. Alternatively, the redistribution traces 404 may be formedfrom a metal layer deposited on the surface of the microelectronicdevice 10, which can then be selectively patterned using a subtractiveprocess, such as etching. It is to be appreciated that it is preferablefor the formation of the redistribution traces 404 to occur while themicroelectronic device 10 is in its wafer form.

Device contacts 12 (shown in hidden line in FIG. 4A) are positionedalong a central portion of the microelectronic device 10. Theredistribution contacts 402 are exposed between peripheral edges 410 ofthe microelectronic device 10 and the outer edge 412 of the conductiveplane 60. As shown, the redistribution traces 404 on the microelectronicdevice 10 provide an electrical connection between the redistributioncontacts 402 and the device contacts 12. Device wires 65 extend beyondthe edge of the microelectronic device 10 to further electricallyconnect the redistribution contacts 402 with element contacts 75 on theinterconnection element 30. This provides for an electrical connectionbetween the microelectronic device 10 and the interconnection element 30without requiring substantial lengths of the wires to extend across thetop surface 414 of the conductive plane 60, as disclosed in the previousembodiments.

In this embodiment, substantial lengths of the redistribution traces 404extend between and substantially parallel to the microelectronic device10 and conductive plane 60. As the conductive plane 60 is a fixed heightabove the conductive traces (and the conductive traces 404 a fixedheight below the conductive plane 60), a desired impedance can beobtained from this arrangement, based on the principles previouslyexplained herein.

Reference wires 68 may extend from the conductive plane 60 to referencecontacts 77 on the interconnection element 30. The reference wires 68may be further connected to a source of reference potential such asground or a power supply input terminal of the microelectronic assembly400.

Referring to FIG. 4B, an alternate embodiment is shown that only differsfrom the prior embodiment to the extent that the conductive plane 60 isnot one continuous plane. In this embodiment, the conductive plane 60may include multiple conductive plane portions 410, 412, 414, 416overlying the redistribution traces 402 and microelectronic device.

As shown, the device contacts 12 respectively extend between conductiveplane portion 410 and conductive plane portion 412, as well as betweenconductive plane portion 414 and conductive plane portion 416.Redistribution traces 404 extend substantially parallel to theconductive plane portions 410, 412, 414, 416 and microelectronic device10. Since the substantial lengths of the redistribution traces 404extend a substantially constant distance from the conductive planeportions 410, 412, 414, and 416, a desired impedance can be obtained inaccordance with previously discussed principles.

The conductive plane portions 410, 412, may be ground planes and theconductive plane portions 414, 416 may be power planes. As in theprevious embodiments, there are numerous variations as to how theconductive portions 410, 412, 414, 416 are connected to each other,reference contacts 77 on the interconnection element, or contacts 12 onthe microelectronic device. In one embodiment, at least one referencewire 68F can extend from the ground conductive plane portions 410, 412to a reference contact 77 on the interconnection element 30. Anotherreference wire 68F′ can also extend from the power plane portions414,416 to a reference contact 77 on the interconnection element 30.Additionally, at least one reference wire 68E can extend between the twoconductive plane portions. For example, in one embodiment, referencewire 68E electrically connects the ground conductive plane portion 410and ground conductive plane portion 412. Similarly, reference wire 68Eelectrically connects the ground conductive plane portion 410 and groundconductive plane portion 412. Furthermore, at least one reference wire68G can connect a conductive plane portion 414 or 412, with a contact 12on the microelectronic device. It is to be appreciated that anycombination of the foregoing may be utilized in connection with thepresent embodiments. In one embodiment, an encapsulant 491 can bedeposited around the microelectronic device 10, conductive plane 60, andwires 65,68. The microelectronic assembly 400 can then be connected viaterminals 40, such as conductive pins or solder ball connections, to thecontacts 489 of a circuit board 493 or other external device.

Referring now to FIG. 5, a microelectronic assembly 400′ according to afurther embodiment is shown. In one embodiment, a second microelectronicdevice 10′ and second conductive plane 60′ are added in a stackedarrangement to the microelectronic assembly 400 shown in FIG. 4. Aspacer 490 may be positioned over the first conductive plane 414 toprovide a support for the second microelectronic device 10′ and secondconductive plane 60′. In one embodiment, the spacer 490 has a heightneeded to provide enough clearance for the wires 65, 68 to extend fromthe first microelectronic device 10 and first conductive plane 60 to thereference contacts 77 and signal contacts 75, without contacting asurface of the second microelectronic device 10′.

As shown, the second microelectronic device 10′ and second conductiveplane 60′ are electrically connected to the interconnection element 30in the same arrangement as the first microelectronic assembly 400 shownin FIG. 4. Redistribution traces 404′ extending along the top surface28′ of the microelectronic device 10′ electrically connect the devicecontacts 12 on the surface of the microelectronic device 10′ with theredistribution contacts 402′ also exposed thereat. Signal wires 65′extend from the redistribution contacts 402′ to signal contacts 75 onthe interconnection element. Similarly, reference wires 68′ extend fromthe conductive plane 60′ to reference contacts 77 on the interconnectionelement 30. So as not to interfere with the wires 65,68 extending fromthe first microelectronic assembly, the wires 65′,68′ extending from theredistribution contacts on the microelectronic device and the conductiveplane extend to contacts positioned adjacent the device and referencecontacts 75,77 to which the lower assembly 400 is electricallyconnected. As further seen in FIG. 5, a dielectric material 491′ such asan encapsulant or an overmold can cover and protect the bond wires 65,68 and the bond wires 65′ 68′ extending from the microelectronicdevices, and can cover and protect other components within the packagesuch as the microelectronic devices and the conductive planes 60, 60′.

The various microelectronic assemblies discussed in the embodimentsabove can be utilized in construction of diverse electronic systems. Forexample, a system 900 in accordance with a further embodiment of theinvention includes a structure 906 as described in the prior embodimentsof microelectronic assemblies above in conjunction with other electroniccomponents 908 and 910. In the example depicted, component 908 is asemiconductor chip whereas component 910 is a display screen, but anyother components can be used. Of course, although only two additionalcomponents are depicted in FIG. 5 for clarity of illustration, thesystem may include any number of such components. The structure 906 asdescribed above may be, for example, a composite chip or a structureincorporating plural chips. In a further variant, both may be provided,and any number of such structures may be used. Structure 906 andcomponents 908 and 910 are mounted in a common housing 901,schematically depicted in broken lines, and are electricallyinterconnected with one another as necessary to form the desiredcircuit. In the exemplary system shown, the system includes a circuitpanel 902 such as a flexible printed circuit board, and the circuitpanel includes numerous conductors 904, of which only one is depicted inFIG. 5, interconnecting the components with one another. However, thisis merely exemplary; any suitable structure for making electricalconnections can be used. The housing 901 is depicted as a portablehousing of the type usable, for example, in a cellular telephone orpersonal digital assistant, and screen 910 is exposed at the surface ofthe housing. Where structure 906 includes a light-sensitive element suchas an imaging chip, a lens 911 or other optical device also may beprovided for routing light to the structure. Again, the simplifiedsystem shown in FIG. 24 is merely exemplary; other systems, includingsystems commonly regarded as fixed structures, such as desktopcomputers, routers and the like can be made using the structuresdiscussed above.

Although the invention herein has been described with reference toparticular embodiments, it is to be understood that these embodimentsare merely illustrative of the principles and applications of thepresent invention. It is therefore to be understood that numerousmodifications may be made to the illustrative embodiments and that otherarrangements may be devised without departing from the spirit and scopeof the present invention as defined by the appended claims.

1. A microelectronic assembly comprising: an interconnection elementincluding a dielectric element, a plurality of element contacts and atleast one reference contact thereon; a microelectronic device having arear surface overlying the dielectric element, a front surface remotetherefrom, device contacts exposed at the front surface, and at leastone surface conductive element attached to the front surface; aplurality of raised conductive elements connecting the device contactswith the element contacts, the raised conductive elements havingsubstantial portions spaced a first height above and extending at leastgenerally parallel to the at least one surface conductive element, suchthat a desired impedance is achieved for the raised conductive elements;and a bond element electrically connecting the at least one surfaceconductive element with the at least one reference contact, wherein theat least one reference contact is connectable to a source of referencepotential.
 2. The microelectronic assembly of claim 1, wherein thesubstantial portion of each conductive element has a length that is atleast 25% of the total length of each individual respective conductiveelement.
 3. The microelectronic assembly of claim 1, wherein thesubstantial portions of the conductive elements are lengths of at least1 millimeter.
 4. The microelectronic assembly of claim 1, wherein thebond element is a first bond element extending beyond a first edge ofthe microelectronic device, the assembly further comprising a secondbond element extending beyond a second edge of the microelectronicdevice and connecting the at least one surface conductive element to asecond reference contact of the interconnection element.
 5. Themicroelectronic assembly as claimed in claim 2, wherein the first andsecond edges meet at a corner of the microelectronic device.
 6. Themicroelectronic assembly of claim 1, wherein at least one of theplurality of raised conductive elements extends beyond a first edge ofthe microelectronic device and the bond element extends beyond the firstedge.
 7. The microelectronic assembly of claim 4, wherein at least oneof the first bond element and the second bond element is positionedbetween at least two of the plurality of raised conductive elements. 8.The microelectronic assembly of claim 1, wherein the bond elementextends in a direction transverse to the direction in which at leastsome of the plurality of raised conductive elements extend.
 9. Themicroelectronic assembly as claimed in claim 1, wherein the raisedconductive elements include bond wires.
 10. The microelectronic assemblyas claimed in claim 1, wherein the conductive elements are bond wires.11. The microelectronic assembly as claimed in claim 1, wherein thesurface conductive element is a power plane.
 12. The microelectronicassembly as claimed in claim 1, wherein the surface conductive elementis a ground plane.
 13. The microelectronic assembly as claimed in claim1, wherein the surface conductive element is comprised of multiplesections, wherein at least a first section is a power plane and a secondsection is a ground plane.
 14. The microelectronic element of claim 13,wherein the first section is adjacent one edge of the device contactsand the second section is adjacent the opposed edge of the devicecontacts.
 15. The microelectronic element of claim 13, wherein the firstand second sections are adjacent the same edge of the device contacts.16. The microelectronic assembly of claim 13, wherein the first sectionis comprised of a first portion and a second portion, and the devicecontacts extend between the first and second portions.
 17. Themicroelectronic assembly of claim 13, wherein the second section iscomprised of a first portion and a second portion, and the devicecontacts extend between the first and second portions.
 18. Themicroelectronic assembly of claim 1, wherein the surface conductiveelement is connectable to a fixed voltage source.
 19. Themicroelectronic assembly of claim 16, wherein another bond elementelectrically connects the first and second portions of the firstsection.
 20. The microelectronic assembly of claim 17, wherein anotherbond element electrically connects the first and second portions of thesecond section.
 21. The microelectronic assembly of claim 17, whereinanother bond element electrically connects device contacts with thefirst portion or second portion of at least one of the first section andsecond sections.
 22. The microelectronic assembly of claim 1, whereinanother bond element connects at least one device contact with at leastone surface conductive element.
 23. The microelectronic assembly ofclaim 1, wherein the surface conductive element reduces an inductance inthe electrical connection between the device contact and a source offixed voltage.
 24. A microelectronic assembly comprising: aninterconnection element having a face; a microelectronic deviceoverlying the face of the interconnection element, the microelectronicdevice having a surface, a plurality of first device contacts disposedat the surface, at least one second device contact disposed at thesurface, and at least one trace deposited on the surface andelectrically connected to the interconnection element, the at least onetrace electrically connecting at least one of the first device contactswith the at least one second device contact; at least one first bondelement electrically connecting the at least one second device contactwith at least one of the element contacts; and at least one metal planeelectrically connected to the interconnection element and attached tothe microelectronic device at a height from the surface greater than aheight of the at least one trace from the surface, the at least onemetal plane being connectable to a source of reference potential, suchthat a desired impedance is achieved for the at least one trace, the atleast one trace having at least a substantial portion extending in adirection substantially parallel to a direction in which the metal planeextends; and at least one second bond element electrically connectingthe metal plane with a reference element of the interconnection element,the reference element being electrically connectable with a source ofreference potential.
 25. The microelectronic assembly of claim 24,wherein the substantial portion of the at least one trace is a lengththat is at least 25% of the total length of the at least one trace. 26.The microelectronic assembly of claim 24, wherein the substantialportion of the at least one trace is a length of at least 1 millimeter.27. The microelectronic assembly of claim 24, wherein the second bondelement extends beyond a first edge of the microelectronic device, andthe second bond element extends beyond a second edge of themicroelectronic device.
 28. The microelectronic assembly as claimed inclaim 27, wherein the first and second edges meet at a corner of themicroelectronic device.
 29. The microelectronic assembly of claim 24,wherein the metal plane reduces an inductance in the electricalconnection between the device contact and a source of fixed voltage. 30.The microelectronic assembly of claim 27 wherein the first bond elementis a plurality of first bond elements and the at least one second bondis positioned between at least two of the plurality of first bondelements.
 31. The microelectronic assembly of claim 24, wherein the atleast one second bond element extends in a direction transverse to thedirection in which the at least one first bond element extends.
 32. Themicroelectronic assembly as claimed in claim 24, wherein the at leastone first bond element or the at least one second bond element includesa bond wire.
 33. The microelectronic assembly as claimed in claim 24,wherein the at least one first bond element or the at least one secondbond element is a bond wire.
 34. The microelectronic assembly as claimedin claim 24, wherein the metal plane is a power plane.
 35. Themicroelectronic assembly as claimed in claim 24, wherein the metal planeis a ground plane.
 36. The microelectronic assembly as claimed in claim24, wherein the metal plane is comprised of multiple sections, whereinat least a first section is a power plane and a second section is aground plane.
 37. The microelectronic element of claim 36, wherein thefirst section is adjacent one edge of the device contacts and the secondsection is adjacent the opposed edge of the device contacts.
 38. Themicroelectronic element of claim 36, wherein the first and secondsections are adjacent the same edge of the device contacts.
 39. Themicroelectronic assembly of claim 36, wherein the first section iscomprised of a first portion and a second portion, and the devicecontacts extend between the first and second portions.
 40. Themicroelectronic assembly of claim 36, wherein the second section iscomprised of a first portion and a second portion, and the devicecontacts extend between the first and second portions.
 41. Themicroelectronic assembly of claim 24, wherein the metal plane isconnectable to a fixed voltage source.
 42. The microelectronic assemblyof claim 39, wherein a third bond element electrically connects thefirst and second portions of the first section.
 43. The microelectronicassembly of claim 40, wherein at least one third bond elementelectrically connects the first and second portions of the secondsection.
 44. The microelectronic assembly of claim 39 or 40, wherein atleast one third bond element electrically connects device contacts withthe first portion or second portion of at least one of the first sectionand second section.
 45. The microelectronic assembly of claim 24,wherein at least one third bond element electrically connects at leastone device contact with at least one surface conductive element.
 46. Themicroelectronic assembly as claimed in claim 24, further comprising atleast one third bond element electrically connecting the metal planewith a reference contact of the interconnection element.
 47. Themicroelectronic assembly as claimed in claim 24, wherein themicroelectronic device is a first microelectronic device, and thereference conductor is a first reference conductor, the assembly furthercomprising a second microelectronic device having a plurality of thirddevice contacts disposed at a surface remote from the firstmicroelectronic device, at least one fourth device contact disposed atthe surface, and at least one trace extending along the surface andelectrically connecting at least one of the third device contacts withthe at least one fourth device contact, and the at least one secondreference conductor overlying the surface of the second microelectronicdevice at a height from the surface greater than a height of the atleast one trace from the surface of the second microelectronic device,the at least one second reference conductor being connectable to asource of reference potential, such that a desired impedance is achievedfor the at least one trace of the second microelectronic device, thesecond reference conductor having at least a substantial portionextending in a direction substantially parallel to a direction in whichthe at least one trace of the second microelectronic device extends. 48.A system comprising an assembly according to claim 24 and one or moreother electronic components electrically connected to the assembly. 49.The system as claimed in claim 48 further comprising a housing, theassembly and the other electronic components being mounted to thehousing.